Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.

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Autores principales: Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain McCulloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/88663b30f82a4cabb723674d0f6693f6
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