Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain McCulloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Format: article
Langue:EN
Publié: Nature Portfolio 2021
Sujets:
Q
Accès en ligne:https://doaj.org/article/88663b30f82a4cabb723674d0f6693f6
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!