Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.

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Autores principales:	Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain McCulloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/88663b30f82a4cabb723674d0f6693f6
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spelling	oai:doaj.org-article:88663b30f82a4cabb723674d0f6693f62021-12-02T13:39:22ZSuppressing bias stress degradation in high performance solution processed organic transistors operating in air10.1038/s41467-021-22683-22041-1723https://doaj.org/article/88663b30f82a4cabb723674d0f6693f62021-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-22683-2https://doaj.org/toc/2041-1723Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.Hamna F. IqbalQianxiang AiKarl J. ThorleyHu ChenIain McCullochChad RiskoJohn E. AnthonyOana D. JurchescuNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Hamna F. Iqbal Qianxiang Ai Karl J. Thorley Hu Chen Iain McCulloch Chad Risko John E. Anthony Oana D. Jurchescu Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
description	Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.
format	article
author	Hamna F. Iqbal Qianxiang Ai Karl J. Thorley Hu Chen Iain McCulloch Chad Risko John E. Anthony Oana D. Jurchescu
author_facet	Hamna F. Iqbal Qianxiang Ai Karl J. Thorley Hu Chen Iain McCulloch Chad Risko John E. Anthony Oana D. Jurchescu
author_sort	Hamna F. Iqbal
title	Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
title_short	Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
title_full	Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
title_fullStr	Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
title_full_unstemmed	Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
title_sort	suppressing bias stress degradation in high performance solution processed organic transistors operating in air
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/88663b30f82a4cabb723674d0f6693f6
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_version_	1718392629137244160

Suppressing bias stress degradation in high performance solution processed organic transistors operating in air

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