Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.

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Bibliographic Details
Main Authors: Shuren Lin, Alexandra Carvalho, Shancheng Yan, Roger Li, Sujung Kim, Aleksandr Rodin, Lídia Carvalho, Emory M. Chan, Xi Wang, Antonio H. Castro Neto, Jie Yao
Format: article
Language:EN
Published: Nature Portfolio 2018
Subjects:
Q
Online Access:https://doaj.org/article/8898ebbc4a6a4a8ba665c89484ae4dd9
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