Indentation size effect in ITO/Si planar structure under concentrated load action

For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thicknes...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autor principal: Harea, Evghenii
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:
Acceso en línea:https://doaj.org/article/8a4a2b1cc03248d4ac22292f48800b1c
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!