Indentation size effect in ITO/Si planar structure under concentrated load action
For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thicknes...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2007
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/8a4a2b1cc03248d4ac22292f48800b1c |
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| Sumario: | For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique
of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-
ments of microhardness of these structures have shown results varying over a wide range in
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being
characteristic of film structures is proposed. |
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