Indentation size effect in ITO/Si planar structure under concentrated load action

For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thicknes...

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Autor principal:	Harea, Evghenii
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/8a4a2b1cc03248d4ac22292f48800b1c
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spelling	oai:doaj.org-article:8a4a2b1cc03248d4ac22292f48800b1c2021-11-21T12:08:13ZIndentation size effect in ITO/Si planar structure under concentrated load action2537-63651810-648Xhttps://doaj.org/article/8a4a2b1cc03248d4ac22292f48800b1c2007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3723https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed. Harea, EvgheniiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 228-232 (2007)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Harea, Evghenii Indentation size effect in ITO/Si planar structure under concentrated load action
description	For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed.
format	article
author	Harea, Evghenii
author_facet	Harea, Evghenii
author_sort	Harea, Evghenii
title	Indentation size effect in ITO/Si planar structure under concentrated load action
title_short	Indentation size effect in ITO/Si planar structure under concentrated load action
title_full	Indentation size effect in ITO/Si planar structure under concentrated load action
title_fullStr	Indentation size effect in ITO/Si planar structure under concentrated load action
title_full_unstemmed	Indentation size effect in ITO/Si planar structure under concentrated load action
title_sort	indentation size effect in ito/si planar structure under concentrated load action
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2007
url	https://doaj.org/article/8a4a2b1cc03248d4ac22292f48800b1c
work_keys_str_mv	AT hareaevghenii indentationsizeeffectinitosiplanarstructureunderconcentratedloadaction
_version_	1718419197902454784

Indentation size effect in ITO/Si planar structure under concentrated load action

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