Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor
Spin-charge interactions are at the core of electronic correlation phenomena in Mott insulators. Here, the authors observe a positive anomalous magnetoresistance in a SrIrO3/SrTiO3 superlattice, indicative of strong spin-charge fluctuations in this pseudospin-half square-lattice Mott insulator.
Guardado en:
Autores principales: | Lin Hao, Zhentao Wang, Junyi Yang, D. Meyers, Joshua Sanchez, Gilberto Fabbris, Yongseong Choi, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, Kipton Barros, Jiun-Haw Chu, M. P. M. Dean, Cristian D. Batista, Jian Liu |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
|
Materias: | |
Acceso en línea: | https://doaj.org/article/8b06c468684244f6bd883d099f6c98ff |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Anomalous Hall magnetoresistance in a ferromagnet
por: Yumeng Yang, et al.
Publicado: (2018) -
Nematic fluctuations in iron-oxychalcogenide Mott insulators
por: B. Freelon, et al.
Publicado: (2021) -
Gate-tunable large magnetoresistance in an all-semiconductor spin valve device
por: M. Oltscher, et al.
Publicado: (2017) -
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
por: Zhe Wang, et al.
Publicado: (2018) -
Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures
por: Le Duc Anh, et al.
Publicado: (2021)