Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations
Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS2 over SnS2 via van der Waals epitaxy of an SnS intermediate and its transformation in the presence of excess sulfur.
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/8b0b7a35d31d449bae24f7d18b966edb |
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