Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Vertically stacked twisted layers of two-dimensional materials can trigger exciting fundamental physics. Here, authors report controlled growth of 30° twisted few-layer SnS2 over SnS2 via van der Waals epitaxy of an SnS intermediate and its transformation in the presence of excess sulfur.

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Autores principales: Peter Sutter, Rina Ibragimova, Hannu-Pekka Komsa, Bruce A. Parkinson, Eli Sutter
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/8b0b7a35d31d449bae24f7d18b966edb
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