Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
Abstract We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence...
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| Main Authors: | , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/8dd28c506caf4f39a78bbce637c489e7 |
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