Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

Abstract We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence...

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Autores principales:	Fumiya Nagasawa, Makoto Takamura, Hiroshi Sekiguchi, Yoshinori Miyamae, Yoshiaki Oku, Ken Nakahara
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8dd28c506caf4f39a78bbce637c489e7
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spelling	oai:doaj.org-article:8dd28c506caf4f39a78bbce637c489e72021-12-02T14:12:09ZProminent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes10.1038/s41598-021-81116-82045-2322https://doaj.org/article/8dd28c506caf4f39a78bbce637c489e72021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-81116-8https://doaj.org/toc/2045-2322Abstract We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400– $$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.Fumiya NagasawaMakoto TakamuraHiroshi SekiguchiYoshinori MiyamaeYoshiaki OkuKen NakaharaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Fumiya Nagasawa Makoto Takamura Hiroshi Sekiguchi Yoshinori Miyamae Yoshiaki Oku Ken Nakahara Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
description	Abstract We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$ 1 × 10 18 cm - 2 at $$800\,{{\mathrm{keV}}}$$ 800 keV , the electroluminescence intensity of these defects is most prominent within a wavelength range of 400– $$1100\,{{\mathrm{nm}}}$$ 1100 nm . The commonly observed $${{\mathrm{D}}}_1$$ D 1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.
format	article
author	Fumiya Nagasawa Makoto Takamura Hiroshi Sekiguchi Yoshinori Miyamae Yoshiaki Oku Ken Nakahara
author_facet	Fumiya Nagasawa Makoto Takamura Hiroshi Sekiguchi Yoshinori Miyamae Yoshiaki Oku Ken Nakahara
author_sort	Fumiya Nagasawa
title	Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
title_short	Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
title_full	Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
title_fullStr	Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
title_full_unstemmed	Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
title_sort	prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/8dd28c506caf4f39a78bbce637c489e7
work_keys_str_mv	AT fumiyanagasawa prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes AT makototakamura prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes AT hiroshisekiguchi prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes AT yoshinorimiyamae prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes AT yoshiakioku prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes AT kennakahara prominentluminescenceofsiliconvacancydefectscreatedinbulksiliconcarbidepnjunctiondiodes
_version_	1718391796989427712

Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes

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