Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
Copper indium oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) thin films were deposited by the RF magnetron sputtering technique using a Cu<sub>2</sub>O:In<sub>2</sub>O<sub>3</sub> target. The films were deposited on glass and...
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| Main Authors: | , , , |
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| Format: | article |
| Language: | EN |
| Published: |
MDPI AG
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/8de0c8eb5ee8471fa6b48f02c8cb33c0 |
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| Summary: | Copper indium oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) thin films were deposited by the RF magnetron sputtering technique using a Cu<sub>2</sub>O:In<sub>2</sub>O<sub>3</sub> target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 °C in an O<sub>2</sub> atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> phases along with CuInO<sub>2</sub> or In<sub>2</sub>O<sub>3</sub> for the films annealed above 500 °C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 °C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500–800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4–3.6 eV during annealing. |
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