Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

Copper indium oxide (Cu2In2O5) thin films were deposited by the RF magnetron sputtering technique using a Cu2O:In2O3 target. The films were deposited on glass and...

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Autores principales:	Giji Skaria, Ashwin Kumar Saikumar, Akshaya D. Shivprasad, Kalpathy B. Sundaram
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> RF sputtering annealing studies optical characteristics XRD morphology studies Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/8de0c8eb5ee8471fa6b48f02c8cb33c0
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spelling	oai:doaj.org-article:8de0c8eb5ee8471fa6b48f02c8cb33c02021-11-25T17:15:37ZAnnealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering10.3390/coatings111112902079-6412https://doaj.org/article/8de0c8eb5ee8471fa6b48f02c8cb33c02021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1290https://doaj.org/toc/2079-6412Copper indium oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) thin films were deposited by the RF magnetron sputtering technique using a Cu<sub>2</sub>O:In<sub>2</sub>O<sub>3</sub> target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 °C in an O<sub>2</sub> atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> phases along with CuInO<sub>2</sub> or In<sub>2</sub>O<sub>3</sub> for the films annealed above 500 °C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 °C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500–800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4–3.6 eV during annealing.Giji SkariaAshwin Kumar SaikumarAkshaya D. ShivprasadKalpathy B. SundaramMDPI AGarticleCu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>RF sputteringannealing studiesoptical characteristicsXRDmorphology studiesEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1290, p 1290 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> RF sputtering annealing studies optical characteristics XRD morphology studies Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> RF sputtering annealing studies optical characteristics XRD morphology studies Engineering (General). Civil engineering (General) TA1-2040 Giji Skaria Ashwin Kumar Saikumar Akshaya D. Shivprasad Kalpathy B. Sundaram Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
description	Copper indium oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) thin films were deposited by the RF magnetron sputtering technique using a Cu<sub>2</sub>O:In<sub>2</sub>O<sub>3</sub> target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 °C in an O<sub>2</sub> atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> phases along with CuInO<sub>2</sub> or In<sub>2</sub>O<sub>3</sub> for the films annealed above 500 °C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 °C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500–800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4–3.6 eV during annealing.
format	article
author	Giji Skaria Ashwin Kumar Saikumar Akshaya D. Shivprasad Kalpathy B. Sundaram
author_facet	Giji Skaria Ashwin Kumar Saikumar Akshaya D. Shivprasad Kalpathy B. Sundaram
author_sort	Giji Skaria
title	Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
title_short	Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
title_full	Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
title_fullStr	Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
title_full_unstemmed	Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering
title_sort	annealing studies of copper indium oxide (cu<sub>2</sub>in<sub>2</sub>o<sub>5</sub>) thin films prepared by rf magnetron sputtering
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/8de0c8eb5ee8471fa6b48f02c8cb33c0
work_keys_str_mv	AT gijiskaria annealingstudiesofcopperindiumoxidecusub2subinsub2subosub5subthinfilmspreparedbyrfmagnetronsputtering AT ashwinkumarsaikumar annealingstudiesofcopperindiumoxidecusub2subinsub2subosub5subthinfilmspreparedbyrfmagnetronsputtering AT akshayadshivprasad annealingstudiesofcopperindiumoxidecusub2subinsub2subosub5subthinfilmspreparedbyrfmagnetronsputtering AT kalpathybsundaram annealingstudiesofcopperindiumoxidecusub2subinsub2subosub5subthinfilmspreparedbyrfmagnetronsputtering
_version_	1718412602692861952

Annealing Studies of Copper Indium Oxide (Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub>) Thin Films Prepared by RF Magnetron Sputtering

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