Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs
In this study, AlGaN/GaN heterojunction-based metal–insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated using silicon nitride (SiN) passivation layer. This layer was deposited under the different gas ratio conditions. The effects of proton irradiation on the curren...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Elsevier
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/8ef21a539e9b4c9482b3cd04df2bd39a |
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