Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...

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Autores principales: Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68
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