Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68 |
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| Résumé: | In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%. |
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