Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...

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Autores principales: Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim
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Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68
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spelling oai:doaj.org-article:8fa3ec2d80e6491bafb59e6bafbe8e682021-11-25T18:23:53ZImprovement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers10.3390/mi121114222072-666Xhttps://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e682021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1422https://doaj.org/toc/2072-666XIn this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.Ki Yeong KimJoo Seok NohTae Young YoonJang Hyun KimMDPI AGarticlesuper junctionIGBTp-pillarn-buffer layeron-state voltagebreakdown voltageMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1422, p 1422 (2021)
institution DOAJ
collection DOAJ
language EN
topic super junction
IGBT
p-pillar
n-buffer layer
on-state voltage
breakdown voltage
Mechanical engineering and machinery
TJ1-1570
spellingShingle super junction
IGBT
p-pillar
n-buffer layer
on-state voltage
breakdown voltage
Mechanical engineering and machinery
TJ1-1570
Ki Yeong Kim
Joo Seok Noh
Tae Young Yoon
Jang Hyun Kim
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
description In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.
format article
author Ki Yeong Kim
Joo Seok Noh
Tae Young Yoon
Jang Hyun Kim
author_facet Ki Yeong Kim
Joo Seok Noh
Tae Young Yoon
Jang Hyun Kim
author_sort Ki Yeong Kim
title Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_short Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_full Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_fullStr Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_full_unstemmed Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_sort improvement in turn-off loss of the super junction igbt with separated n-buffer layers
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68
work_keys_str_mv AT kiyeongkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers
AT jooseoknoh improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers
AT taeyoungyoon improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers
AT janghyunkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers
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