Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...
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MDPI AG
2021
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oai:doaj.org-article:8fa3ec2d80e6491bafb59e6bafbe8e682021-11-25T18:23:53ZImprovement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers10.3390/mi121114222072-666Xhttps://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e682021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1422https://doaj.org/toc/2072-666XIn this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.Ki Yeong KimJoo Seok NohTae Young YoonJang Hyun KimMDPI AGarticlesuper junctionIGBTp-pillarn-buffer layeron-state voltagebreakdown voltageMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1422, p 1422 (2021) |
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super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage Mechanical engineering and machinery TJ1-1570 |
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super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage Mechanical engineering and machinery TJ1-1570 Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
description |
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%. |
format |
article |
author |
Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim |
author_facet |
Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim |
author_sort |
Ki Yeong Kim |
title |
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
title_short |
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
title_full |
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
title_fullStr |
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
title_full_unstemmed |
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers |
title_sort |
improvement in turn-off loss of the super junction igbt with separated n-buffer layers |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68 |
work_keys_str_mv |
AT kiyeongkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT jooseoknoh improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT taeyoungyoon improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT janghyunkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers |
_version_ |
1718411211355193344 |