Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...

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Main Authors:	Ki Yeong Kim, Joo Seok Noh, Tae Young Yoon, Jang Hyun Kim
Format:	article
Language:	EN
Published:	MDPI AG 2021
Subjects:	super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage Mechanical engineering and machinery TJ1-1570
Online Access:	https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68
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spelling	oai:doaj.org-article:8fa3ec2d80e6491bafb59e6bafbe8e682021-11-25T18:23:53ZImprovement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers10.3390/mi121114222072-666Xhttps://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e682021-11-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1422https://doaj.org/toc/2072-666XIn this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.Ki Yeong KimJoo Seok NohTae Young YoonJang Hyun KimMDPI AGarticlesuper junctionIGBTp-pillarn-buffer layeron-state voltagebreakdown voltageMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1422, p 1422 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage Mechanical engineering and machinery TJ1-1570
spellingShingle	super junction IGBT p-pillar n-buffer layer on-state voltage breakdown voltage Mechanical engineering and machinery TJ1-1570 Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
description	In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E<sub>off</sub>) drops by about 7% when on-state voltage (<i>V</i><sub>on</sub>) and breakdown voltage (BV) are similar. <i>V</i><sub>on</sub> increases by about 0.5% and BV decreases by only about 0.8%.
format	article
author	Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim
author_facet	Ki Yeong Kim Joo Seok Noh Tae Young Yoon Jang Hyun Kim
author_sort	Ki Yeong Kim
title	Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_short	Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_full	Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_fullStr	Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_full_unstemmed	Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
title_sort	improvement in turn-off loss of the super junction igbt with separated n-buffer layers
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/8fa3ec2d80e6491bafb59e6bafbe8e68
work_keys_str_mv	AT kiyeongkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT jooseoknoh improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT taeyoungyoon improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers AT janghyunkim improvementinturnofflossofthesuperjunctionigbtwithseparatednbufferlayers
_version_	1718411211355193344

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

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