Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.

Guardado en:
Detalles Bibliográficos
Autores principales: Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hesselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari, Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Péter Udvarhelyi, Gergő Thiering, Adam Gali, Jörg Wrachtrup, Florian Kaiser
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/900d7e84f217416aac92df9fb51631fe
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Internet

https://doaj.org/article/900d7e84f217416aac92df9fb51631fe

Ejemplares similares