Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.

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Autores principales: Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hesselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari, Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Péter Udvarhelyi, Gergő Thiering, Adam Gali, Jörg Wrachtrup, Florian Kaiser
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/900d7e84f217416aac92df9fb51631fe
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spelling oai:doaj.org-article:900d7e84f217416aac92df9fb51631fe2021-12-02T16:51:13ZSpin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide10.1038/s41467-020-16330-52041-1723https://doaj.org/article/900d7e84f217416aac92df9fb51631fe2020-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16330-5https://doaj.org/toc/2041-1723Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.Naoya MoriokaCharles BabinRoland NagyIzel GedizErik HesselmeierDi LiuMatthew JoliffeMatthias NiethammerDurga DasariVadim VorobyovRoman KolesovRainer StöhrJawad Ul-HassanNguyen Tien SonTakeshi OhshimaPéter UdvarhelyiGergő ThieringAdam GaliJörg WrachtrupFlorian KaiserNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Naoya Morioka
Charles Babin
Roland Nagy
Izel Gediz
Erik Hesselmeier
Di Liu
Matthew Joliffe
Matthias Niethammer
Durga Dasari
Vadim Vorobyov
Roman Kolesov
Rainer Stöhr
Jawad Ul-Hassan
Nguyen Tien Son
Takeshi Ohshima
Péter Udvarhelyi
Gergő Thiering
Adam Gali
Jörg Wrachtrup
Florian Kaiser
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
description Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.
format article
author Naoya Morioka
Charles Babin
Roland Nagy
Izel Gediz
Erik Hesselmeier
Di Liu
Matthew Joliffe
Matthias Niethammer
Durga Dasari
Vadim Vorobyov
Roman Kolesov
Rainer Stöhr
Jawad Ul-Hassan
Nguyen Tien Son
Takeshi Ohshima
Péter Udvarhelyi
Gergő Thiering
Adam Gali
Jörg Wrachtrup
Florian Kaiser
author_facet Naoya Morioka
Charles Babin
Roland Nagy
Izel Gediz
Erik Hesselmeier
Di Liu
Matthew Joliffe
Matthias Niethammer
Durga Dasari
Vadim Vorobyov
Roman Kolesov
Rainer Stöhr
Jawad Ul-Hassan
Nguyen Tien Son
Takeshi Ohshima
Péter Udvarhelyi
Gergő Thiering
Adam Gali
Jörg Wrachtrup
Florian Kaiser
author_sort Naoya Morioka
title Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
title_short Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
title_full Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
title_fullStr Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
title_full_unstemmed Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
title_sort spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/900d7e84f217416aac92df9fb51631fe
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