Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.
Guardado en:
Autores principales: | Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hesselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari, Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Péter Udvarhelyi, Gergő Thiering, Adam Gali, Jörg Wrachtrup, Florian Kaiser |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/900d7e84f217416aac92df9fb51631fe |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
por: Naoya Morioka, et al.
Publicado: (2021) -
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
por: Roland Nagy, et al.
Publicado: (2019) -
Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
por: Matthias Niethammer, et al.
Publicado: (2019) -
Silicon carbide formation from methane and silicon monoxide
por: Trygve Storm Aarnæs, et al.
Publicado: (2020) -
Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
por: Fumiya Nagasawa, et al.
Publicado: (2021)