Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding

Abstract An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma treatment offers the advantages of having no defect formation, such as pinholes, by energetic ions. In this study, an activated Cu surface by Ar plasma chemically reacted with N free radicals to evenly form C...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Haesung Park, Hankyeol Seo, Sarah Eunkyung Kim
Format: article
Langue:EN
Publié: Nature Portfolio 2020
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/90c48bcacad245888cf328699115ed40
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!