Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding

Abstract An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma treatment offers the advantages of having no defect formation, such as pinholes, by energetic ions. In this study, an activated Cu surface by Ar plasma chemically reacted with N free radicals to evenly form C...

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Autores principales:	Haesung Park, Hankyeol Seo, Sarah Eunkyung Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/90c48bcacad245888cf328699115ed40
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spelling	oai:doaj.org-article:90c48bcacad245888cf328699115ed402021-12-02T15:11:51ZAnti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding10.1038/s41598-020-78396-x2045-2322https://doaj.org/article/90c48bcacad245888cf328699115ed402020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78396-xhttps://doaj.org/toc/2045-2322Abstract An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma treatment offers the advantages of having no defect formation, such as pinholes, by energetic ions. In this study, an activated Cu surface by Ar plasma chemically reacted with N free radicals to evenly form Cu nitride passivation over the entire Cu surface. According to chemical state analysis using XPS, Cu oxidation was effectively prevented in air, and the thickness of the Cu nitride passivation was within 3 nm. Based on statistical analysis using the DOE technique with N2 plasma variables, namely, RF power, working pressure, and plasma treatment time, we experimentally demonstrated that a lower RF power is the most effective for forming uniform Cu nitride passivation because of a lower plasma density. When the N2 plasma density reached approximately 109 cm−3 in which the remote mode was generated, high energy electrons in the plasma were significantly reduced and the amount of oxygen detected on the Cu surface was minimized. Finally, low temperature (300 °C) Cu–Cu bonding was performed with a pair of the anti-oxidant Cu layers formed by the remote mode N2 plasma. Cu atomic diffusion with new grains was observed across the bonded interface indicating significantly improved bonding quality over bare Cu–Cu bonding.Haesung ParkHankyeol SeoSarah Eunkyung KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-13 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Haesung Park Hankyeol Seo Sarah Eunkyung Kim Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
description	Abstract An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma treatment offers the advantages of having no defect formation, such as pinholes, by energetic ions. In this study, an activated Cu surface by Ar plasma chemically reacted with N free radicals to evenly form Cu nitride passivation over the entire Cu surface. According to chemical state analysis using XPS, Cu oxidation was effectively prevented in air, and the thickness of the Cu nitride passivation was within 3 nm. Based on statistical analysis using the DOE technique with N2 plasma variables, namely, RF power, working pressure, and plasma treatment time, we experimentally demonstrated that a lower RF power is the most effective for forming uniform Cu nitride passivation because of a lower plasma density. When the N2 plasma density reached approximately 109 cm−3 in which the remote mode was generated, high energy electrons in the plasma were significantly reduced and the amount of oxygen detected on the Cu surface was minimized. Finally, low temperature (300 °C) Cu–Cu bonding was performed with a pair of the anti-oxidant Cu layers formed by the remote mode N2 plasma. Cu atomic diffusion with new grains was observed across the bonded interface indicating significantly improved bonding quality over bare Cu–Cu bonding.
format	article
author	Haesung Park Hankyeol Seo Sarah Eunkyung Kim
author_facet	Haesung Park Hankyeol Seo Sarah Eunkyung Kim
author_sort	Haesung Park
title	Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
title_short	Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
title_full	Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
title_fullStr	Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
title_full_unstemmed	Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
title_sort	anti-oxidant copper layer by remote mode n2 plasma for low temperature copper–copper bonding
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/90c48bcacad245888cf328699115ed40
work_keys_str_mv	AT haesungpark antioxidantcopperlayerbyremotemoden2plasmaforlowtemperaturecoppercopperbonding AT hankyeolseo antioxidantcopperlayerbyremotemoden2plasmaforlowtemperaturecoppercopperbonding AT saraheunkyungkim antioxidantcopperlayerbyremotemoden2plasmaforlowtemperaturecoppercopperbonding
_version_	1718387644344303616

Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding

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