HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
The numerical calculations of the electrical potential distribution and current passing in the contacts of the high temperature superconductor (HTSC) with semiconductors silicon (Si) and indium antimonite (InSb) were carried out. There were analyzed the possibilities to prepare the diode detector...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/915bdc0783424987a655188fc90bbe7e |
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