HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics

The numerical calculations of the electrical potential distribution and current passing in the contacts of the high temperature superconductor (HTSC) with semiconductors silicon (Si) and indium antimonite (InSb) were carried out. There were analyzed the possibilities to prepare the diode detector...

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Autor principal:	Cherner, Iacov
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/915bdc0783424987a655188fc90bbe7e
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spelling	oai:doaj.org-article:915bdc0783424987a655188fc90bbe7e2021-11-21T12:09:13ZHTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics 2537-63651810-648Xhttps://doaj.org/article/915bdc0783424987a655188fc90bbe7e2006-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3599https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The numerical calculations of the electrical potential distribution and current passing in the contacts of the high temperature superconductor (HTSC) with semiconductors silicon (Si) and indium antimonite (InSb) were carried out. There were analyzed the possibilities to prepare the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4K. The comparison of structures based on Si and InSb was carried out. The obtained results were explained taking into account the physical properties of these semiconductors. Both advantages and disadvantages of these materials were discussed. The optimum application spheres were determined for Si and InSb accordingly. The comparison of the obtained results with existent literature data shows that the proposed DD can be 10÷100 times better than the existing devices. Therefore, these DD are perspective for cryogenic electronics, and their preparation is a problem of today. Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 3-4, Pp 360-365 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
description	The numerical calculations of the electrical potential distribution and current passing in the contacts of the high temperature superconductor (HTSC) with semiconductors silicon (Si) and indium antimonite (InSb) were carried out. There were analyzed the possibilities to prepare the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4K. The comparison of structures based on Si and InSb was carried out. The obtained results were explained taking into account the physical properties of these semiconductors. Both advantages and disadvantages of these materials were discussed. The optimum application spheres were determined for Si and InSb accordingly. The comparison of the obtained results with existent literature data shows that the proposed DD can be 10÷100 times better than the existing devices. Therefore, these DD are perspective for cryogenic electronics, and their preparation is a problem of today.
format	article
author	Cherner, Iacov
author_facet	Cherner, Iacov
author_sort	Cherner, Iacov
title	HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
title_short	HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
title_full	HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
title_fullStr	HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
title_full_unstemmed	HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics
title_sort	htsc – si and htsc – insb contacts for diode detectors: comparison of characteristics
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/915bdc0783424987a655188fc90bbe7e
work_keys_str_mv	AT cherneriacov htscsiandhtscinsbcontactsfordiodedetectorscomparisonofcharacteristics
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HTSC – Si and HTSC – InSb contacts for diode detectors: comparison of characteristics

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