High quality Nb nanolayers as a base for superconducting spintronics

Advanced technological process for high quality Nb film preparation of large area (~600 mm2 ) and constant nanoscale thickness is developed. Homogeneity and proper thickness of the Nb layer were proved by the target-holder movement during the DC sputtering. The special protection cover Si-layer...

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Autor principal: Zdravkov, Vladimir
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
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spelling oai:doaj.org-article:9194d41920a64493a808274bc75586072021-11-21T12:05:55ZHigh quality Nb nanolayers as a base for superconducting spintronics2537-63651810-648Xhttps://doaj.org/article/9194d41920a64493a808274bc75586072009-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4029https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Advanced technological process for high quality Nb film preparation of large area (~600 mm2 ) and constant nanoscale thickness is developed. Homogeneity and proper thickness of the Nb layer were proved by the target-holder movement during the DC sputtering. The special protection cover Si-layer was used for a long-term stability of the superconducting properties of the prepared Nb films. The increase of superconducting critical temperature (> 1.5 K for films with comparable thickness) in comparison with films prepared by conventional technique is reported. Zdravkov, VladimirD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 1, Pp 78-81 (2009)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Zdravkov, Vladimir
High quality Nb nanolayers as a base for superconducting spintronics
description Advanced technological process for high quality Nb film preparation of large area (~600 mm2 ) and constant nanoscale thickness is developed. Homogeneity and proper thickness of the Nb layer were proved by the target-holder movement during the DC sputtering. The special protection cover Si-layer was used for a long-term stability of the superconducting properties of the prepared Nb films. The increase of superconducting critical temperature (> 1.5 K for films with comparable thickness) in comparison with films prepared by conventional technique is reported.
format article
author Zdravkov, Vladimir
author_facet Zdravkov, Vladimir
author_sort Zdravkov, Vladimir
title High quality Nb nanolayers as a base for superconducting spintronics
title_short High quality Nb nanolayers as a base for superconducting spintronics
title_full High quality Nb nanolayers as a base for superconducting spintronics
title_fullStr High quality Nb nanolayers as a base for superconducting spintronics
title_full_unstemmed High quality Nb nanolayers as a base for superconducting spintronics
title_sort high quality nb nanolayers as a base for superconducting spintronics
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2009
url https://doaj.org/article/9194d41920a64493a808274bc7558607
work_keys_str_mv AT zdravkovvladimir highqualitynbnanolayersasabaseforsuperconductingspintronics
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