Scattering mechanisms of charge carriers in gallium antimonide doped with iron

Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron con...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Gheorghiţă, Eugen, Guţuleac, Leonid, Melinte, Victoria, Zlotea, Olga, Postolachi, Igor
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:
Acceso en línea:https://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!