Scattering mechanisms of charge carriers in gallium antimonide doped with iron
Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron con...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c |
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| Sumario: | Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide
doped with iron and simultaneously doped with iron and tellurium are described. According
to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the
mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation
of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic
characteristics of scattering of the charge carriers determined by clusters are determined. |
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