Scattering mechanisms of charge carriers in gallium antimonide doped with iron

Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron con...

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Autores principales:	Gheorghiţă, Eugen, Guţuleac, Leonid, Melinte, Victoria, Zlotea, Olga, Postolachi, Igor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c
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spelling	oai:doaj.org-article:93447c4b3d6840d1a48eca025a20d70c2021-11-21T12:06:50ZScattering mechanisms of charge carriers in gallium antimonide doped with iron2537-63651810-648Xhttps://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c2008-07-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3922https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic characteristics of scattering of the charge carriers determined by clusters are determined. Gheorghiţă, EugenGuţuleac, LeonidMelinte, VictoriaZlotea, OlgaPostolachi, IgorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 3, Pp 375-381 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Gheorghiţă, Eugen Guţuleac, Leonid Melinte, Victoria Zlotea, Olga Postolachi, Igor Scattering mechanisms of charge carriers in gallium antimonide doped with iron
description	Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic characteristics of scattering of the charge carriers determined by clusters are determined.
format	article
author	Gheorghiţă, Eugen Guţuleac, Leonid Melinte, Victoria Zlotea, Olga Postolachi, Igor
author_facet	Gheorghiţă, Eugen Guţuleac, Leonid Melinte, Victoria Zlotea, Olga Postolachi, Igor
author_sort	Gheorghiţă, Eugen
title	Scattering mechanisms of charge carriers in gallium antimonide doped with iron
title_short	Scattering mechanisms of charge carriers in gallium antimonide doped with iron
title_full	Scattering mechanisms of charge carriers in gallium antimonide doped with iron
title_fullStr	Scattering mechanisms of charge carriers in gallium antimonide doped with iron
title_full_unstemmed	Scattering mechanisms of charge carriers in gallium antimonide doped with iron
title_sort	scattering mechanisms of charge carriers in gallium antimonide doped with iron
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2008
url	https://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c
work_keys_str_mv	AT gheorghitaeugen scatteringmechanismsofchargecarriersingalliumantimonidedopedwithiron AT gutuleacleonid scatteringmechanismsofchargecarriersingalliumantimonidedopedwithiron AT melintevictoria scatteringmechanismsofchargecarriersingalliumantimonidedopedwithiron AT zloteaolga scatteringmechanismsofchargecarriersingalliumantimonidedopedwithiron AT postolachiigor scatteringmechanismsofchargecarriersingalliumantimonidedopedwithiron
_version_	1718419199679791104

Scattering mechanisms of charge carriers in gallium antimonide doped with iron

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