Scattering mechanisms of charge carriers in gallium antimonide doped with iron
Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron con...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/93447c4b3d6840d1a48eca025a20d70c |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|