Ultra-high gain diffusion-driven organic transistor

Organic field-effect transistors offer limited gain due to the large contact resistance and the channel length modulation. Here, Torricelli et al.show a new transistor architecture where the charge injection and extraction are driven by the charge diffusion and a gain larger than 700 is achieved.

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Autores principales: Fabrizio Torricelli, Luigi Colalongo, Daniele Raiteri, Zsolt Miklós Kovács-Vajna, Eugenio Cantatore
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/9353ae452ed54c18987424192b2daa96
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