Ultra-high gain diffusion-driven organic transistor
Organic field-effect transistors offer limited gain due to the large contact resistance and the channel length modulation. Here, Torricelli et al.show a new transistor architecture where the charge injection and extraction are driven by the charge diffusion and a gain larger than 700 is achieved.
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9353ae452ed54c18987424192b2daa96 |
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