Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling
Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO3 and KTaO3, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magneto...
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| Auteurs principaux: | , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2020
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| Accès en ligne: | https://doaj.org/article/942fe52b891347b8990db2274950c2ea |
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| Résumé: | Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO3 and KTaO3, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magnetoresistance and planar Hall effect. |
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