Effects of energetic ion irradiation on WSe2/SiC heterostructures
Abstract The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for us...
Enregistré dans:
Auteurs principaux: | , , , |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2017
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/946f4bee94f3467d9a4313d7702d971f |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|