Effects of energetic ion irradiation on WSe2/SiC heterostructures

Abstract The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for us...

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Autores principales:	Tan Shi, Roger C. Walker, Igor Jovanovic, Joshua A. Robinson
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/946f4bee94f3467d9a4313d7702d971f
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spelling	oai:doaj.org-article:946f4bee94f3467d9a4313d7702d971f2021-12-02T16:06:37ZEffects of energetic ion irradiation on WSe2/SiC heterostructures10.1038/s41598-017-04042-82045-2322https://doaj.org/article/946f4bee94f3467d9a4313d7702d971f2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04042-8https://doaj.org/toc/2045-2322Abstract The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for use in high radiation environments such as space. Here, we present the effects of irradiation by protons, iron, and silver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectroscopy. It was found that with 2 MeV protons, a fluence of 1016 protons/cm2 was necessary to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset was observed. Simultaneously, a new absorption edge appeared at 1.1 eV below the conduction band of SiC. The irradiation with heavy ions at 1016 ions/cm2 converts WSe2 into a mixture of WOx and Se-deficient WSe2. The valence band is also heavily altered due to oxidation and amorphization. However, these doses are in excess of the doses needed to damage TMD-based electronics due to defects generated in common dielectric and substrate materials. As such, the radiation stability of WSe2-based electronics is not expected to be limited by the radiation hardness of WSe2, but rather by the dielectric and substrate.Tan ShiRoger C. WalkerIgor JovanovicJoshua A. RobinsonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tan Shi Roger C. Walker Igor Jovanovic Joshua A. Robinson Effects of energetic ion irradiation on WSe2/SiC heterostructures
description	Abstract The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for use in high radiation environments such as space. Here, we present the effects of irradiation by protons, iron, and silver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectroscopy. It was found that with 2 MeV protons, a fluence of 1016 protons/cm2 was necessary to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset was observed. Simultaneously, a new absorption edge appeared at 1.1 eV below the conduction band of SiC. The irradiation with heavy ions at 1016 ions/cm2 converts WSe2 into a mixture of WOx and Se-deficient WSe2. The valence band is also heavily altered due to oxidation and amorphization. However, these doses are in excess of the doses needed to damage TMD-based electronics due to defects generated in common dielectric and substrate materials. As such, the radiation stability of WSe2-based electronics is not expected to be limited by the radiation hardness of WSe2, but rather by the dielectric and substrate.
format	article
author	Tan Shi Roger C. Walker Igor Jovanovic Joshua A. Robinson
author_facet	Tan Shi Roger C. Walker Igor Jovanovic Joshua A. Robinson
author_sort	Tan Shi
title	Effects of energetic ion irradiation on WSe2/SiC heterostructures
title_short	Effects of energetic ion irradiation on WSe2/SiC heterostructures
title_full	Effects of energetic ion irradiation on WSe2/SiC heterostructures
title_fullStr	Effects of energetic ion irradiation on WSe2/SiC heterostructures
title_full_unstemmed	Effects of energetic ion irradiation on WSe2/SiC heterostructures
title_sort	effects of energetic ion irradiation on wse2/sic heterostructures
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/946f4bee94f3467d9a4313d7702d971f
work_keys_str_mv	AT tanshi effectsofenergeticionirradiationonwse2sicheterostructures AT rogercwalker effectsofenergeticionirradiationonwse2sicheterostructures AT igorjovanovic effectsofenergeticionirradiationonwse2sicheterostructures AT joshuaarobinson effectsofenergeticionirradiationonwse2sicheterostructures
_version_	1718384975826386944

Effects of energetic ion irradiation on WSe2/SiC heterostructures

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