A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps

Abstract Microbumps in three-dimensional integrated circuit now becomes essential technology to reach higher packaging density. However, the small volume of microbumps dramatically changes the characteristics from the flip-chip (FC) solder joints. For a 20 µm diameter microbump, the cross-section ar...

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Autores principales:	Yuan-Wei Chang, Chia-chia Hu, Hsin-Ying Peng, Yu-Chun Liang, Chih Chen, Tao-chih Chang, Chau-Jie Zhan, Jing-Ye Juang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/95d9bab85d2d47cb8eb43dd4186fb7ff
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spelling	oai:doaj.org-article:95d9bab85d2d47cb8eb43dd4186fb7ff2021-12-02T15:08:42ZA new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps10.1038/s41598-018-23809-12045-2322https://doaj.org/article/95d9bab85d2d47cb8eb43dd4186fb7ff2018-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-23809-1https://doaj.org/toc/2045-2322Abstract Microbumps in three-dimensional integrated circuit now becomes essential technology to reach higher packaging density. However, the small volume of microbumps dramatically changes the characteristics from the flip-chip (FC) solder joints. For a 20 µm diameter microbump, the cross-section area and the volume are only 1/25 and 1/125 of a 100 µm diameter FC joint. The small area significantly enlarges the current density although the current crowding effect was reduced at the same time. The small volume of solder can be fully transformed into the intermetallic compounds (IMCs) very easily, and the IMCs are usually stronger under electromigration (EM). These result in the thoroughly change of the EM failure mechanism in microbumps. In this study, microbumps with two different diameter and flip-chip joints were EM tested. A new failure mechanism was found obviously in microbumps, which is the surface diffusion of Sn. Under EM testing, Sn atoms tend to migrate along the surface to the circumference of Ni and Cu metallization to form Ni3Sn4 and Cu3Sn IMCs respectively. When the Sn diffuses away, necking or serious void formation occurs in the solder, which weakens the electrical and mechanical properties of the microbumps. Theoretic calculation indicates that this failure mode will become even significantly for the microbumps with smaller dimensions than the 18 µm microbumps.Yuan-Wei ChangChia-chia HuHsin-Ying PengYu-Chun LiangChih ChenTao-chih ChangChau-Jie ZhanJing-Ye JuangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yuan-Wei Chang Chia-chia Hu Hsin-Ying Peng Yu-Chun Liang Chih Chen Tao-chih Chang Chau-Jie Zhan Jing-Ye Juang A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
description	Abstract Microbumps in three-dimensional integrated circuit now becomes essential technology to reach higher packaging density. However, the small volume of microbumps dramatically changes the characteristics from the flip-chip (FC) solder joints. For a 20 µm diameter microbump, the cross-section area and the volume are only 1/25 and 1/125 of a 100 µm diameter FC joint. The small area significantly enlarges the current density although the current crowding effect was reduced at the same time. The small volume of solder can be fully transformed into the intermetallic compounds (IMCs) very easily, and the IMCs are usually stronger under electromigration (EM). These result in the thoroughly change of the EM failure mechanism in microbumps. In this study, microbumps with two different diameter and flip-chip joints were EM tested. A new failure mechanism was found obviously in microbumps, which is the surface diffusion of Sn. Under EM testing, Sn atoms tend to migrate along the surface to the circumference of Ni and Cu metallization to form Ni3Sn4 and Cu3Sn IMCs respectively. When the Sn diffuses away, necking or serious void formation occurs in the solder, which weakens the electrical and mechanical properties of the microbumps. Theoretic calculation indicates that this failure mode will become even significantly for the microbumps with smaller dimensions than the 18 µm microbumps.
format	article
author	Yuan-Wei Chang Chia-chia Hu Hsin-Ying Peng Yu-Chun Liang Chih Chen Tao-chih Chang Chau-Jie Zhan Jing-Ye Juang
author_facet	Yuan-Wei Chang Chia-chia Hu Hsin-Ying Peng Yu-Chun Liang Chih Chen Tao-chih Chang Chau-Jie Zhan Jing-Ye Juang
author_sort	Yuan-Wei Chang
title	A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
title_short	A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
title_full	A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
title_fullStr	A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
title_full_unstemmed	A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps
title_sort	new failure mechanism of electromigration by surface diffusion of sn on ni and cu metallization in microbumps
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/95d9bab85d2d47cb8eb43dd4186fb7ff
work_keys_str_mv	AT yuanweichang anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chiachiahu anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT hsinyingpeng anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT yuchunliang anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chihchen anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT taochihchang anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chaujiezhan anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT jingyejuang anewfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT yuanweichang newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chiachiahu newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT hsinyingpeng newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT yuchunliang newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chihchen newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT taochihchang newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT chaujiezhan newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps AT jingyejuang newfailuremechanismofelectromigrationbysurfacediffusionofsnonniandcumetallizationinmicrobumps
_version_	1718388075355176960

A new failure mechanism of electromigration by surface diffusion of Sn on Ni and Cu metallization in microbumps

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