Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the...

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Autores principales:	Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/9675e54df30045d2bf6179117e19652b
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spelling	oai:doaj.org-article:9675e54df30045d2bf6179117e19652b2021-12-02T16:49:34ZAuthor Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures10.1038/s41467-018-07297-52041-1723https://doaj.org/article/9675e54df30045d2bf6179117e19652b2018-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-07297-5https://doaj.org/toc/2041-1723The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘μ = σ/ne ’ in place of ‘μ = ne/σ ’. This has been corrected in both the PDF and HTML versions of the Article.Jangyup SonJunyoung KwonSunPhil KimYinchuan LvJaehyung YuJong-Young LeeHuije RyuKenji WatanabeTakashi TaniguchiRita Garrido-MenachoNadya MasonElif ErtekinPinshane Y. HuangGwan-Hyoung LeeArend M. van der ZandeNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-1 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
description	The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘μ = σ/ne ’ in place of ‘μ = ne/σ ’. This has been corrected in both the PDF and HTML versions of the Article.
format	article
author	Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande
author_facet	Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande
author_sort	Jangyup Son
title	Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_short	Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_full	Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_fullStr	Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_full_unstemmed	Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_sort	author correction: atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/9675e54df30045d2bf6179117e19652b
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Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

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