Impact ionization by hot carriers in a black phosphorus field effect transistor

Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.

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Auteurs principaux: Faisal Ahmed, Young Duck Kim, Zheng Yang, Pan He, Euyheon Hwang, Hyunsoo Yang, James Hone, Won Jong Yoo
Format: article
Langue:EN
Publié: Nature Portfolio 2018
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Accès en ligne:https://doaj.org/article/973b37f190f94a85846d107f805bc6eb
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