Impact ionization by hot carriers in a black phosphorus field effect transistor
Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.
Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/973b37f190f94a85846d107f805bc6eb |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication. |
|---|