Impact ionization by hot carriers in a black phosphorus field effect transistor

Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Faisal Ahmed, Young Duck Kim, Zheng Yang, Pan He, Euyheon Hwang, Hyunsoo Yang, James Hone, Won Jong Yoo
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2018
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/973b37f190f94a85846d107f805bc6eb
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

id	oai:doaj.org-article:973b37f190f94a85846d107f805bc6eb
record_format	dspace
spelling	oai:doaj.org-article:973b37f190f94a85846d107f805bc6eb2021-12-02T16:49:32ZImpact ionization by hot carriers in a black phosphorus field effect transistor10.1038/s41467-018-05981-02041-1723https://doaj.org/article/973b37f190f94a85846d107f805bc6eb2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05981-0https://doaj.org/toc/2041-1723Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.Faisal AhmedYoung Duck KimZheng YangPan HeEuyheon HwangHyunsoo YangJames HoneWon Jong YooNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Faisal Ahmed Young Duck Kim Zheng Yang Pan He Euyheon Hwang Hyunsoo Yang James Hone Won Jong Yoo Impact ionization by hot carriers in a black phosphorus field effect transistor
description	Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.
format	article
author	Faisal Ahmed Young Duck Kim Zheng Yang Pan He Euyheon Hwang Hyunsoo Yang James Hone Won Jong Yoo
author_facet	Faisal Ahmed Young Duck Kim Zheng Yang Pan He Euyheon Hwang Hyunsoo Yang James Hone Won Jong Yoo
author_sort	Faisal Ahmed
title	Impact ionization by hot carriers in a black phosphorus field effect transistor
title_short	Impact ionization by hot carriers in a black phosphorus field effect transistor
title_full	Impact ionization by hot carriers in a black phosphorus field effect transistor
title_fullStr	Impact ionization by hot carriers in a black phosphorus field effect transistor
title_full_unstemmed	Impact ionization by hot carriers in a black phosphorus field effect transistor
title_sort	impact ionization by hot carriers in a black phosphorus field effect transistor
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/973b37f190f94a85846d107f805bc6eb
work_keys_str_mv	AT faisalahmed impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT youngduckkim impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT zhengyang impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT panhe impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT euyheonhwang impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT hyunsooyang impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT jameshone impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor AT wonjongyoo impactionizationbyhotcarriersinablackphosphorusfieldeffecttransistor
_version_	1718383292095397888

Impact ionization by hot carriers in a black phosphorus field effect transistor

Documents similaires