Impact ionization by hot carriers in a black phosphorus field effect transistor
Carrier multiplication processes based on new electron-hole pair generation is instrumental to realizing ultrafast and efficient optoelectronic devices. Here, the authors demonstrate multilayered black phosphorous-based transistors that show enhanced performance due to carrier multiplication.
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/973b37f190f94a85846d107f805bc6eb |
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