Carrier lifetime enhancement in halide perovskite via remote epitaxy

Carrier lifetime enhancement in halide perovskite via remote epitaxy

Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Jie Jiang, Xin Sun, Xinchun Chen, Baiwei Wang, Zhizhong Chen, Yang Hu, Yuwei Guo, Lifu Zhang, Yuan Ma, Lei Gao, Fengshan Zheng, Lei Jin, Min Chen, Zhiwei Ma, Yuanyuan Zhou, Nitin P. Padture, Kory Beach, Humberto Terrones, Yunfeng Shi, Daniel Gall, Toh-Ming Lu, Esther Wertz, Jing Feng, Jian Shi
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
Science
Q
Accès en ligne:https://doaj.org/article/980ef2ab3f98472697eb340f3a1e3c6c
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Internet

https://doaj.org/article/980ef2ab3f98472697eb340f3a1e3c6c

Documents similaires