Recent progress on metal halide perovskite field-effect transistors

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolu...

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Autores principales: Huihui Zhu, Ao Liu, Yong-Young Noh
Formato: article
Lenguaje:EN
Publicado: Taylor & Francis Group 2021
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Acceso en línea:https://doaj.org/article/98a82178614c49a88bed6dac1588126c
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