Recent progress on metal halide perovskite field-effect transistors

Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolu...

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Autores principales:	Huihui Zhu, Ao Liu, Yong-Young Noh
Formato:	article
Lenguaje:	EN
Publicado:	Taylor & Francis Group 2021
Materias:	metal halide perovskite field-effect transistor lead/tin-based perovskite ion migration stability Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/98a82178614c49a88bed6dac1588126c
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spelling	oai:doaj.org-article:98a82178614c49a88bed6dac1588126c2021-11-26T11:19:47ZRecent progress on metal halide perovskite field-effect transistors1598-03162158-160610.1080/15980316.2021.1957725https://doaj.org/article/98a82178614c49a88bed6dac1588126c2021-10-01T00:00:00Zhttp://dx.doi.org/10.1080/15980316.2021.1957725https://doaj.org/toc/1598-0316https://doaj.org/toc/2158-1606Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.Huihui ZhuAo LiuYong-Young NohTaylor & Francis Grouparticlemetal halide perovskitefield-effect transistorlead/tin-based perovskiteion migrationstabilityComputer engineering. Computer hardwareTK7885-7895ENJournal of Information Display, Vol 22, Iss 4, Pp 257-268 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	metal halide perovskite field-effect transistor lead/tin-based perovskite ion migration stability Computer engineering. Computer hardware TK7885-7895
spellingShingle	metal halide perovskite field-effect transistor lead/tin-based perovskite ion migration stability Computer engineering. Computer hardware TK7885-7895 Huihui Zhu Ao Liu Yong-Young Noh Recent progress on metal halide perovskite field-effect transistors
description	Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolution of electrical characteristics and stability, then discusses outstanding challenges and provides an outlook on the possibilities offered by this electronic material family for use in backplane drivers for active matrix displays.
format	article
author	Huihui Zhu Ao Liu Yong-Young Noh
author_facet	Huihui Zhu Ao Liu Yong-Young Noh
author_sort	Huihui Zhu
title	Recent progress on metal halide perovskite field-effect transistors
title_short	Recent progress on metal halide perovskite field-effect transistors
title_full	Recent progress on metal halide perovskite field-effect transistors
title_fullStr	Recent progress on metal halide perovskite field-effect transistors
title_full_unstemmed	Recent progress on metal halide perovskite field-effect transistors
title_sort	recent progress on metal halide perovskite field-effect transistors
publisher	Taylor & Francis Group
publishDate	2021
url	https://doaj.org/article/98a82178614c49a88bed6dac1588126c
work_keys_str_mv	AT huihuizhu recentprogressonmetalhalideperovskitefieldeffecttransistors AT aoliu recentprogressonmetalhalideperovskitefieldeffecttransistors AT yongyoungnoh recentprogressonmetalhalideperovskitefieldeffecttransistors
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Recent progress on metal halide perovskite field-effect transistors

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