Recent progress on metal halide perovskite field-effect transistors
Metal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. This review summarizes progress achieved recently in three-dimensional (3D) lead-based and two-dimensional (2D) tin-based perovskite FETs, and identifies the evolu...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Taylor & Francis Group
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/98a82178614c49a88bed6dac1588126c |
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