High-performance p-channel transistors with transparent Zn doped-CuI

Designing efficient thin-film transistors and circuits based on transparent p-type semiconductors remains a challenge. Here, the authors propose a solution-based doping approach to realize high performance transparent inorganic p-type semiconductors (Zn-doped CuI) by spin coating at 80 C with good o...

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Autores principales: Ao Liu, Huihui Zhu, Won-Tae Park, Se-Jun Kim, Hyungjun Kim, Myung-Gil Kim, Yong-Young Noh
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/9921ebba0187444dbf26190cb0006181
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