High-performance p-channel transistors with transparent Zn doped-CuI

Designing efficient thin-film transistors and circuits based on transparent p-type semiconductors remains a challenge. Here, the authors propose a solution-based doping approach to realize high performance transparent inorganic p-type semiconductors (Zn-doped CuI) by spin coating at 80 C with good o...

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Autores principales:	Ao Liu, Huihui Zhu, Won-Tae Park, Se-Jun Kim, Hyungjun Kim, Myung-Gil Kim, Yong-Young Noh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/9921ebba0187444dbf26190cb0006181
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id	oai:doaj.org-article:9921ebba0187444dbf26190cb0006181
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spelling	oai:doaj.org-article:9921ebba0187444dbf26190cb00061812021-12-02T18:53:15ZHigh-performance p-channel transistors with transparent Zn doped-CuI10.1038/s41467-020-18006-62041-1723https://doaj.org/article/9921ebba0187444dbf26190cb00061812020-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-18006-6https://doaj.org/toc/2041-1723Designing efficient thin-film transistors and circuits based on transparent p-type semiconductors remains a challenge. Here, the authors propose a solution-based doping approach to realize high performance transparent inorganic p-type semiconductors (Zn-doped CuI) by spin coating at 80 C with good operational stability.Ao LiuHuihui ZhuWon-Tae ParkSe-Jun KimHyungjun KimMyung-Gil KimYong-Young NohNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ao Liu Huihui Zhu Won-Tae Park Se-Jun Kim Hyungjun Kim Myung-Gil Kim Yong-Young Noh High-performance p-channel transistors with transparent Zn doped-CuI
description	Designing efficient thin-film transistors and circuits based on transparent p-type semiconductors remains a challenge. Here, the authors propose a solution-based doping approach to realize high performance transparent inorganic p-type semiconductors (Zn-doped CuI) by spin coating at 80 C with good operational stability.
format	article
author	Ao Liu Huihui Zhu Won-Tae Park Se-Jun Kim Hyungjun Kim Myung-Gil Kim Yong-Young Noh
author_facet	Ao Liu Huihui Zhu Won-Tae Park Se-Jun Kim Hyungjun Kim Myung-Gil Kim Yong-Young Noh
author_sort	Ao Liu
title	High-performance p-channel transistors with transparent Zn doped-CuI
title_short	High-performance p-channel transistors with transparent Zn doped-CuI
title_full	High-performance p-channel transistors with transparent Zn doped-CuI
title_fullStr	High-performance p-channel transistors with transparent Zn doped-CuI
title_full_unstemmed	High-performance p-channel transistors with transparent Zn doped-CuI
title_sort	high-performance p-channel transistors with transparent zn doped-cui
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/9921ebba0187444dbf26190cb0006181
work_keys_str_mv	AT aoliu highperformancepchanneltransistorswithtransparentzndopedcui AT huihuizhu highperformancepchanneltransistorswithtransparentzndopedcui AT wontaepark highperformancepchanneltransistorswithtransparentzndopedcui AT sejunkim highperformancepchanneltransistorswithtransparentzndopedcui AT hyungjunkim highperformancepchanneltransistorswithtransparentzndopedcui AT myunggilkim highperformancepchanneltransistorswithtransparentzndopedcui AT yongyoungnoh highperformancepchanneltransistorswithtransparentzndopedcui
_version_	1718377341866999808

High-performance p-channel transistors with transparent Zn doped-CuI

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