Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Autores principales: Mingzhi Dai, Weiliang Wang, Pengjun Wang, Muhammad Zahir Iqbal, Nasim Annabi, Nasir Amin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/992acff782de493798838f700eccfde9
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