Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

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Autores principales:	Mingzhi Dai, Weiliang Wang, Pengjun Wang, Muhammad Zahir Iqbal, Nasim Annabi, Nasir Amin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/992acff782de493798838f700eccfde9
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spelling	oai:doaj.org-article:992acff782de493798838f700eccfde92021-12-02T17:52:25ZAuthor Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor10.1038/s41598-021-91377-y2045-2322https://doaj.org/article/992acff782de493798838f700eccfde92021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91377-yhttps://doaj.org/toc/2045-2322An amendment to this paper has been published and can be accessed via a link at the top of the paper.Mingzhi DaiWeiliang WangPengjun WangMuhammad Zahir IqbalNasim AnnabiNasir AminNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-2 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mingzhi Dai Weiliang Wang Pengjun Wang Muhammad Zahir Iqbal Nasim Annabi Nasir Amin Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
description	An amendment to this paper has been published and can be accessed via a link at the top of the paper.
format	article
author	Mingzhi Dai Weiliang Wang Pengjun Wang Muhammad Zahir Iqbal Nasim Annabi Nasir Amin
author_facet	Mingzhi Dai Weiliang Wang Pengjun Wang Muhammad Zahir Iqbal Nasim Annabi Nasir Amin
author_sort	Mingzhi Dai
title	Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
title_short	Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
title_full	Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
title_fullStr	Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
title_full_unstemmed	Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
title_sort	author correction: realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/992acff782de493798838f700eccfde9
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_version_	1718379243036999680

Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

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