Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage,...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9a75c4a7e566421a913abc0da57c0793 |
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