Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage,...

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Autores principales:	Shaofeng Guo, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9a75c4a7e566421a913abc0da57c0793
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spelling	oai:doaj.org-article:9a75c4a7e566421a913abc0da57c07932021-12-02T11:50:56ZAnomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps10.1038/s41598-017-06467-72045-2322https://doaj.org/article/9a75c4a7e566421a913abc0da57c07932017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06467-7https://doaj.org/toc/2045-2322Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN data exhibit two zones with identical amplitudes but reversal time constants. This abnormal switching behavior can be explained by the theory of complete 4-state trap model (with two stable states and two metastable states), rather than the simple 2-state or improved 3-state trap model. The results provide a direct experimental evidence of the existence of two metastable states in a single oxide trap, contributing to the comprehensive understanding of trap-related reliability and variability issues in nanoscale transistors.Shaofeng GuoRunsheng WangDongyuan MaoYangyuan WangRu HuangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shaofeng Guo Runsheng Wang Dongyuan Mao Yangyuan Wang Ru Huang Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
description	Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN data exhibit two zones with identical amplitudes but reversal time constants. This abnormal switching behavior can be explained by the theory of complete 4-state trap model (with two stable states and two metastable states), rather than the simple 2-state or improved 3-state trap model. The results provide a direct experimental evidence of the existence of two metastable states in a single oxide trap, contributing to the comprehensive understanding of trap-related reliability and variability issues in nanoscale transistors.
format	article
author	Shaofeng Guo Runsheng Wang Dongyuan Mao Yangyuan Wang Ru Huang
author_facet	Shaofeng Guo Runsheng Wang Dongyuan Mao Yangyuan Wang Ru Huang
author_sort	Shaofeng Guo
title	Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
title_short	Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
title_full	Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
title_fullStr	Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
title_full_unstemmed	Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
title_sort	anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/9a75c4a7e566421a913abc0da57c0793
work_keys_str_mv	AT shaofengguo anomalousrandomtelegraphnoiseinnanoscaletransistorsasdirectevidenceoftwometastablestatesofoxidetraps AT runshengwang anomalousrandomtelegraphnoiseinnanoscaletransistorsasdirectevidenceoftwometastablestatesofoxidetraps AT dongyuanmao anomalousrandomtelegraphnoiseinnanoscaletransistorsasdirectevidenceoftwometastablestatesofoxidetraps AT yangyuanwang anomalousrandomtelegraphnoiseinnanoscaletransistorsasdirectevidenceoftwometastablestatesofoxidetraps AT ruhuang anomalousrandomtelegraphnoiseinnanoscaletransistorsasdirectevidenceoftwometastablestatesofoxidetraps
_version_	1718395179698749440

Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

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